Infineon BC859CE6327HTSA1

Name: Infineon BC859CE6327HTSA1
Brand: Infineon
SKU: BC859CE6327HTSA1

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

$ 0.022

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Rochester Electronics	2	BC859CE6327HTSA1	410,460					0.051	0.042	0.037	7h
DigiKey		BC859CE6327HTSA1CT-ND	11	1	Cut Tape	0.300	0.184	0.184	0.184	0.184
Future Electronics	2	BC859CE6327HTSA1	0	3K	Tape & Reel					0.039
Avnet		BC859CE6327HTSA1	0	45K							1d
Arrow Electronics		BC859CE6327HTSA1	0	45K

数据表和文档

下载 Infineon BC859CE6327HTSA1 的数据表和制造商文档。

IHS

Datasheet11 页14 年前

Datasheet8 页0 年前

_legacy Avnet

库存历史记录

3 个月趋势:

-0.01%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon BC859CE6327HTSA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1984-10-10

Lifecycle StatusEOL (Last Updated: 4 months ago)

LTB Date2015-10-15

LTD Date2016-10-15

描述

由其分销商提供的 Infineon BC859CE6327HTSA1 的描述。

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

Semicontronic

Trans GP BJT PNP 30V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Verical

PNP Bipolar Transistor, SOT23, RoHS

Infineon SCT

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 420 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 330 / Package Type = SC-59 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 850

Distrelec