供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-27
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
相关零件
VishaySUM85N15-19-E3
Trans MOSFET N-CH 150V 85A Automotive 3-Pin(2+Tab) D2PAK / MOSFET N-CH 150V 85A D2PAK
InfineonIPB117N20NFDATMA1
Power MOSFET, N Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount
InfineonIPB64N25S320ATMA1
Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount
描述
由其分销商提供的 Infineon AUIRFS4127 的描述。
MOSFET N-CH 200V 72A D2PAK / N-Channel 200 V 72A (Tc) 375W (Tc) Surface Mount PG-TO263-3
Automotive Q101 200V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 72A Automotive 3-Pin(2+Tab) D2PAK Tube
Transistor MOSFET N-CH 200V 72A 3-Pin TO-263AB Tube
Avnet Japan
Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)72 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max22 mΩ
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm