供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
相关零件
InfineonIRFS3107TRL7PP
N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont
STMicroelectronicsSTH240N75F3-6
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH250N55F3-6
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
描述
由其分销商提供的 Infineon AUIRFS3107-7P 的描述。
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK Tube
Transistor MOSFET N-ch 75V 190A D2PAK-7
TUBE / Automotive MOSFET 75V, 260A, 2.6 mOhm, 160 nC Qg, D2Pak-7P
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation370 W
Rds On Max2.6 mΩ
Rise Time80 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm