供应链
Country of OriginMainland China, Taiwan
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-06
Lifecycle StatusNRND (Last Updated: 1 week ago)
相关零件
InfineonAUIRFP4310Z
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package
InfineonIRFP2907ZPBF
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 310 W
VishayIRFP9140PBF
Power MOSFET, General Purpose, P Channel, 100 V, 21 A, 0.2 ohm, TO-247AC, Through Hole
描述
由其分销商提供的 Infineon AUIRFP4110 的描述。
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.62 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity400
Power Dissipation370 W
Rds On Max4.5 mΩ
Turn-Off Delay Time78 ns
Turn-On Delay Time25 ns
Dimensions
Height24.99 mm