供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
相关零件
InfineonIRFP4004PBF
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 380 W
InfineonIRLP3034PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
InfineonIRFP7430PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHS
VishaySIHG460B-GE3
MOSFET, N-CH, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 Infineon AUIRFP4004 的描述。
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 350A Automotive 3-Pin(3+Tab) TO-247AC Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 40V, 195A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time190 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.92 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.7 mΩ
Package Quantity400
Power Dissipation380 W
Rds On Max1.7 mΩ
Rise Time370 ns
Threshold Voltage2 V
Turn-Off Delay Time160 ns
Turn-On Delay Time59 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm