备用零件
Price @ 1000
$ 1.54
$ 1.224
Stock
98,296
809,780
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
330 W
330 W
Input Capacitance
5.11 nF
5.11 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-23
Lifecycle StatusObsolete (Last Updated: 5 months ago)
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描述
由其分销商提供的 Infineon AUIRF2805 的描述。
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 175A Automotive 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Low on-resistance; 175C operating temperature; Fast switching; Fully avalanche rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 55V, 75A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.11 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance4.7 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max4.7 mΩ
Rise Time120 ns
Threshold Voltage2 V
Turn-Off Delay Time68 ns
Turn-On Delay Time14 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm