Infineon 1EDN7512BXTSA1

Name: Infineon 1EDN7512BXTSA1
Brand: Infineon
SKU: 1EDN7512BXTSA1

Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs, PG-SOT23-5, RoHS

$ 0.286

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Distributor		SKU		Min	Pkg
Avnet		1EDN7512BXTSA1	3,000	3K						0.244	5d
Newark		1EDN7512BXTSA1	15,355	1	Cut Tape	0.720	0.539	0.444	0.395	0.395
Arrow Electronics	3	1EDN7512BXTSA1	2,634	1		0.590	0.428	0.345	0.345	0.345
Rutronik		ICGDRV1141	3,000	3K						0.332	15h
Rochester Electronics	2	1EDN7512BXTSA1	114,980					0.313	0.260	0.231	1d

数据表和文档

下载 Infineon 1EDN7512BXTSA1 的数据表和制造商文档。

IHS

Datasheet27 页4 年前

ODG (Origin Data Global)

SHENGYU ELECTRONICS

库存历史记录

3 个月趋势:

-5.93%

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.39.00.60

Introduction Date2016-11-02

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon 1EDN7512BXTSA1 的描述。

Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs, PG-SOT23-5, RoHS

SHENGYU ELECTRONICS

1EDN751x Series 20 V 8 A SMT Advanced Single-Channel Driver - PG-SOT23-5-1

Future Electronics

DRIVER, EICE, SINGLE-CHANNEL, LOW-SIDE GATE IC, 4 A SOUCE, 8 A SINK, COMMON OUT

RS (Formerly Allied Electronics)

MOSFET and Power Driver 8A Single Lo Side Inv/Non-Inv 5-Pin SOT-23 T/R

Avnet Japan

GaN/IGBT/MOSFET, 1-Channel, Low Side, 8 A, 4.5 V to 20 V, 19 ns, 5 Pins, SOT-23

Avnet

GATE DRIV, GAN/IGBT/MOSFET, 1CH, SOT23-5; Driver Configuration: Low Side; Peak Output Current: 8A; Supply Voltage Min: 4.5V; Supply Voltage Max: 20V; Driver Case Style: SOT-23; No. of Pins: 5Pins; Input Delay: 19ns; Output Dela

Farnell

Gate Driver, Igbt, Mosfet, 1Ch, Sot-23-5; No. Of Channels:1Channels; Gate Driver Type:Non-Isolated; Driver Configuration:Low Side; Power Switch Type:Gan Hemt, Igbt, Mosfet; No. Of Pins:5Pins; Ic Case/Package:Sot-23; Sink Current:8Arohs Compliant: Yes |Infineon Technologies 1EDN7512BXTSA1

Newark

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.1EDN family: Fast, precise, strong and compatibleHighly efficient SMPS enabled by 5 ns short slew rates and ±5ns propagation delay precision for fast MOSFET and GaN switchingSeparate source and sink outputs simplify the application designIndustry standard packages and pinout ease system design upgrades

Infineon