GeneSiC Semiconductor G3R30MT12K

Name: GeneSiC Semiconductor G3R30MT12K
Brand: GeneSiC Semiconductor
SKU: G3R30MT12K

Trans MOSFET N-CH SiC 1.2KV 70A 4-Pin(4+Tab) TO-247

$ 20.745

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
TME	2	G3R30MT12K	0	1	22.470	22.470	21.080	21.080	21.080	13h
Newark		G3R30MT12K	0	600				20.410	20.410
Farnell		G3R30MT12K	0	1	22.762*	20.233*	19.385*	19.385*	19.385*	8h
element14 APAC		G3R30MT12K	0	1	25.517*	23.888*	23.888*	23.888*	23.888*	12h
Win Source		WS-G3R30MT12K	80	2		20.177	17.487	17.487	17.487	23h

数据表和文档

下载 GeneSiC Semiconductor G3R30MT12K 的数据表和制造商文档。

TME

Datasheet9 页5 年前

IHS

CAD 模型

从我们值得信赖的合作伙伴处下载 GeneSiC Semiconductor G3R30MT12K 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)

描述

由其分销商提供的 GeneSiC Semiconductor G3R30MT12K 的描述。

Trans MOSFET N-CH SiC 1.2KV 70A 4-Pin(4+Tab) TO-247

Verical

1200V 30mΩ TO-247-4 G3R™ SiC MOSFET

GeneSiC Semiconductor

场效应管, MOSFET, SIC, N沟道, 1.2KV, 90A, 400W;

element14 APAC

Power Field-Effect Transistor, 70A I(D), 1200V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

Sic Mosfet, N-Ch, 1.2Kv, 90A, 400W; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:15V; Power Dissipation:400W Rohs Compliant: Yes |Genesic G3R30MT12K

Newark