价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | GS61008T-MR | 0 | 250 | |||||||||
| Component Stockers USA | GS61008T-MR | 3,746 | >1wk | |||||||||
| XScomponents | GS61008T-MR | 0 | 3K | 4h |
描述
由其分销商提供的 GaN Systems GS61008T-MR 的描述。
Trans MOSFET N-CH GaN 100V 90A 4-Pin GaNPX T/R
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
制造商别名
GaN Systems 在全球拥有多个品牌，分销商可将其用作替代名称。GaN Systems 也可称为以下名称：
- GAN SYSTEMS INC
- GaNPower
- GaN Systems / Infineon
技术规格
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Dimensions
Height621 µm