供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2010-04-02
Lifecycle StatusObsolete (Last Updated: 1 month ago)
相关零件
NXP SemiconductorsMRF6V4300NBR5
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
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GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V
描述
由其分销商提供的 NXP Semiconductors MRF6V3090NBR1 的描述。
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
Transistor RF FET N-CH 110V 470MHz to 1215MHz 4-Pin TO-272WB T/R
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
RF ULTRA HIGH FREQUENCY BAND, N-
OPTOISOLTR 3.75KV 2CH TRANS 8-SO
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageTO-270-4
Contact PlatingTin
MountScrew, Surface Mount
Number of Pins5
Number of Terminals4
Weight1.911098 g
Technical
Drain to Source Voltage (Vdss)115 V
Frequency860 MHz
Gain21 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency860 MHz
Max Operating Temperature225 °C
Min Breakdown Voltage115 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power18 W
Test Current350 mA
Test Voltage50 V
Voltage Rating110 V
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
合规声明