相关零件
onsemiFQB65N06TM
3.75W(Ta),150W(Tc) 4V@ 250¦ÌA 65nC@ 10V 1N 60V 16m¦¸@ 32.5A,10V 2.41pF@25V D2PAK
InfineonIRF9Z24NSPBF
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
描述
由其分销商提供的 onsemi FQB7P06TM 的描述。
Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) D2PAK T/R
3.75W(Ta),45W(Tc) 4V@ 250¦ÌA 8.2nC@ 10V 1P 60V 410m¦¸@ 3.5A,10V 295pF@25V D2PAK
MOSFET P-CH 60V 7A D2PAK
Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IC SUPERVISOR 1 CHANNEL 5SSOP
P-CHANNEL POWER MOSFET
MOSFETs 60V P-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max410 mΩ
Rise Time50 ns
Turn-Off Delay Time7.5 ns
Voltage Rating (DC)-60 V