onsemi FGB30N6S2D
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-10
Lifecycle StatusObsolete (Last Updated: 5 months ago)
描述
由其分销商提供的 onsemi FGB30N6S2D 的描述。
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT 600V 45A 167W TO263AB
IGBTs Dl, 600V Size 3 N-Ch
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.95 V
Collector Emitter Voltage (VCEO)600 V
Current Rating45 A
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current45 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Reverse Recovery Time46 ns
Rise Time10 ns
Voltage Rating (DC)600 V