onsemi FGA180N30DTU

Name: onsemi FGA180N30DTU
Brand: onsemi
SKU: FGA180N30DTU

IGBT 300V 180A 480W Through Hole TO-3PN

$ 3.802

Obsolete

数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
Verical	2	FGA180N30DTU	216	76			4.725	4.225	3.975
Rochester Electronics		FGA180N30DTU	15,404				3.780	3.380	3.180	16h
Win Source		WS-FGA180N30DTU	2,221	11			3.700	3.700	3.700	17h
Worldway Electronics		FGA180N30DTU	15,987	7		1.081	1.048	0.992	0.992	15h
QUARKTWIN TECHNOLOGY LTD	2	FGA180N30DTU	联系方式		3.636	3.272	2.945	2.386	2.147	>1wk

数据表和文档

下载 onsemi FGA180N30DTU 的数据表和制造商文档。

IHS

Datasheet9 页19 年前

Farnell

库存历史记录

3 个月趋势:

-14.29%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-06-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2010-06-03

LTD Date2010-12-03

描述

由其分销商提供的 onsemi FGA180N30DTU 的描述。

IGBT 300V 180A 480W Through Hole TO-3PN

Avnet

Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 1.4V @ 15V 40A 180A 480W 21ns

Fly-Wing Technology

Insulated Gate Bipolar Transistor, 180A I(C), 300V V(BR)CES, N-Channel

IHS

IGBT, TO-3P; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:300V; Current, Ic Continuous a Max:180A; Voltage, Vce Sat Max:1.4V; Power Dissipation:480W; Case Style:TO-3P; Termination Type:Through Hole; Current, Ic @ Vce Sat:40A; Current, Icm Pulsed:450A; Pin Configuration:With flywheel diode; Pins, No. of:3; Power, Pd:480W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.26°C/W; Time, Fall:140ns; Time, Rise:210ns; Transistors, No. of:1; Voltage, Vceo:300V

Farnell