Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time15 µs
Forward Current50 mA
Forward Voltage1.2 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output TypePhototransistor
Power Dissipation75 mW
Reverse Breakdown Voltage5 V
Reverse Voltage5 V
Rise Time15 µs
Sensing Distance5.9944 mm
Wavelength940 nm