价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | ITR20001/T | 0 | 600 | |||||||||
| Win Source | WS-ITR20001/T | 97,129 | 305 | 10h | ||||||||
| UnikeyIC | ITR20001/T | 5 | 1 | Cut Tape | 2d | |||||||
| LCSC | C264269 | 36,645 | 5 | 18h | ||||||||
| Fly-Wing Technology | ITR20001/T | 89,297 | 3d |
描述
由其分销商提供的 Everlight ITR20001/T 的描述。
Diffuse Photoelectric Sensor, 5mm Min, 5mm Max, 0.04-1.60mA, Rectangular, Through Hole Mount
Optical Switches, Reflective, Phototransistor Output Opto Interrupter
940nm Reflective 5mm Phototransistor 5V 6.4mm*4.9mm*6.5mm
20mA 5mm Plugin Reflective Optical Interrupters ROHS
Reflective Photoelectric Switch
Photointerrupter Reflective Phototransistor
Mounting Style = THD / Collector-Emitter Voltage (VCEO) Max. V = 30 / Fall Time Max. us = 25 / Power Dissipation (Pd) Max. mW = 75 / Rise Time Max. us = 25 / Reverse Voltage (Vr) V = 5 / Emitter−Collector Voltage (VECO) Max. V = 5 / Forward Current (If) Max. mA = 50 / Dark Current Max. nA = 100 / Sensor Output = Phototransistor / Peak Wavelength nm = 940
制造商别名
Everlight 在全球拥有多个品牌，分销商可将其用作替代名称。Everlight 也可称为以下名称：
- Everlight Electronics Co Ltd
- Everlight Electronics
- EVERLIGH
- EVER
- EVL
- EVE
- Everlight Elec
- EVERLIG
- EVERLIGHT ELECTRONIC
- EVERLIGHT INTERNATIONAL CORP
- EVERLIGHT ELECT
- Everlight Americas
- Everlight / Fairchild
- EVERLIGHT ELECTRONICS CO LTD (VA)
- EVERLIGHT ELECTRONICS GMBH
- EVERLIGHT INTL CORP
- Everlight Electronics CO
- EVERLIGHT/LT
- Everlight International
- NIHON DEMPA KOGYO
- EVERLIGHT/FSC
- Glow-Lite Corp
- OPTO DEVICES GMBH
- EVERLIGHT ELECTRONI
- EVERLIGHT CORPORATION
技术规格
Physical
Case/PackageDIP
MountThrough Hole
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Fall Time25 µs
Forward Current20 mA
Forward Voltage1.2 V
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Supply Voltage1.5 V
Min Operating Temperature-25 °C
Min Supply Voltage1.2 V
Number of Elements1
Output TypePhototransistor
PackagingBulk
Power Dissipation75 mW
Response Time25 µs
Reverse Breakdown Voltage5 V
Reverse Voltage5 V
Rise Time25 µs
Sensing Distance5 mm
Wavelength940 nm
Dimensions
Height6.5 mm
Length6.4 mm