价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | ZXTN25050DFHTA | 108,000 | 3K | 10h | ||||||||
| Verical | ZXTN25050DFHTA | 105,000 | 3K | |||||||||
| TME | ZXTN25050DFHTA | 19 | 1 | 7h | ||||||||
| DigiKey | ZXTN25050DFHCT-ND | 7,751 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | ZXTN25050DFHTA | 0 | 50 | Bulk | 1d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.ZXTN25040DFHTA
Bipolar (BJT) Single Transistor, NPN, 40 V, 4 A, 1.25 W, SOT-23, Surface Mount
描述
由其分销商提供的 Diodes Inc. ZXTN25050DFHTA 的描述。
Power Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZXTN25050D Series NPN 4 A 50 V Medium Power Low Saturation Transistor - SOT-23
Trans GP BJT NPN 50V 4A 1810mW 3-Pin SOT-23 T/R
General Purpose Transistors NPN Ic=4A Vceo=50V hfe=300~900 P=1.25W SOT23
210mV@ 400mA,4A NPN 1.81W 7V 50nA 150V 50V 4A SOT-23-3 3.05mm*1.4mm*1mm
Bipolar Transistors - BJT NPN 50V HIGH GAIN
NPN TRANSISTOR 100V 3A SOT23 RoHSconf
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)150 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage260 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min20
Max Breakdown Voltage50 V
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.81 W
Transition Frequency200 MHz
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm