由其分销商提供的 Diodes Inc. ZXMP6A18K 的描述。
10.1W 20V 1V(Min) 44nC 60V 55mΩ@ 10V 1.58nF@ 30V DPAK 6.8mm(width)
Power Field-Effect Transistor, 10.4A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
MOSFET, P, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipati
MOSFET, P, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:10.4A; Resistance, Rds On:0.055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-1V; Case Style:DPAK; Termination ;RoHS Compliant: Yes
MOSFET, P, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:10.4A; Resistance, Rds On:0.055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-1V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Current, Idm Pulse:37.5A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd:4.3W; Power, Pd 50mm sq PCB:4.3W; Resistance, Rds on Max:0.055ohm; SMD Marking:ZXMP 6A18; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V; Width, External:6.8mm