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描述
由其分销商提供的 Diodes Inc. ZXMP6A13FTA 的描述。
Trans MOSFET P-CH 60V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 60V 0.9A SOT23-3
Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount
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MOSFET,P CH,60V,0.9A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.1A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 400m Ω @ 900mA, 10V 900mA Ta -55°C~150°C TJ MOSFET P-CH 60V 0.9A SOT23-3
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)900 mA
Current Rating-1.1 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time5.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance219 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation625 mW
Rds On Max400 mΩ
Resistance600 mΩ
Rise Time2.2 ns
Schedule B8541210080
Threshold Voltage-3 V
Turn-Off Delay Time11.2 ns
Turn-On Delay Time1.6 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm