供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-10-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-08-05
LTD Date2020-02-05
相关零件
Diodes Inc.ZVP2120GTA
P-Channel 200 V 25 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-223
VishayIRFL210PBF.
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W
描述
由其分销商提供的 Diodes Inc. ZXMP2120G4TA 的描述。
ZXMP2120G4 Series P-Channel 200 V 25 Ohm Power MOSFET Surface Mount - SOT-223-3
Trans MOSFET P-CH 200V 0.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 0.2A I(D), 200V, 25ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET
P-CH MOS-FET 200mA 200V SOT223 RoHSconf
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating-200 mA
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance25 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance100 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2 W
Rds On Max25 Ω
Resistance25 Ω
Rise Time15 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-200 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm