价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMN2A04DN8TA | 400 | 1 | Cut Tape | ||||||||
| DigiKey | ZXMN2A04DN8CT-ND | 506 | 1 | Cut Tape | ||||||||
| Future Electronics | ZXMN2A04DN8TA | 0 | 500 | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | ZXMN2A04DN8TA | 0 | 25 | Bulk | 2h | |||||||
| Avnet | ZXMN2A04DN8TA | 0 | 500 | 6d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-16
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
Diodes Inc.DMN2028USS-13
1.56W(Ta) 8V 1.3V@ 250¦ÌA 11.6nC@ 4.5 V 1N 20V 20m¦¸@ 9.4A,4.5V 7.3A 1nF@10V SOIC-8
描述
由其分销商提供的 Diodes Inc. ZXMN2A04DN8TA 的描述。
Transistor MOSFET Array Dual N-CH 20V 7.7A 8-Pin SOIC T/R
Dual N-Channel 20 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
Mosfet, Dual, N-Ch, 20V, 7.7A Rohs Compliant: Yes |Diodes Inc. ZXMN2A04DN8TA
2.1W 12V 700mV@ 250¦ÌA (Min) 22.1nC@ 5V 2N 20V 25m¦¸@ 5.9A,4.5V 5.9A 1.88nF@10V SOIC-8 5mm*4mm*1.5mm
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGS
Diodes Inc SCT
场效应管, MOSFET, 双路, N沟道, 20V, 7.7A;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)5.9 A
Current Rating6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time30.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.88 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time14.8 ns
Schedule B8541290080
Turn-Off Delay Time50.5 ns
Turn-On Delay Time7.9 ns
Voltage Rating (DC)20 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm