价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | ZXMN2A01FTA | 48,000 | 3K | 10h | ||||||||
| Newark | ZXMN2A01FTA | 5,729 | 5 | Cut Tape | ||||||||
| Arrow Electronics | ZXMN2A01FTA | 1,316 | 458 | |||||||||
| Verical | ZXMN2A01FTA | 18,000 | 3K | |||||||||
| Future Electronics | ZXMN2A01FTA | 492,000 | 3K | Tape & Reel |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Diodes Inc. ZXMN2A01FTA 的描述。
Power MOSFET, Low Voltage, N Channel, 20 V, 2.2 A, 0.12 ohm, SOT-23, Surface Mount
ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
20V N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current, Id:2.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Pd:806mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:8A; SMD Marking:7N2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating2.09 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time5.21 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance303 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation806 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation625 mW
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time5.21 ns
Schedule B8541210080
Threshold Voltage700 mV
Turn-Off Delay Time7.47 ns
Turn-On Delay Time2.49 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm