MOSFET, BRIDGE, SM8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SM; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id P Channel:1.5A; Current Id Max:1.8A; Current Temperature:25°C; No. of Transistors:4; On State Resistance N Channel Max:1.8ohm; On State Resistance P Channel Max:1.5ohm; Package / Case:SM-8; Power Dissipation Pd:1.7W; Power Dissipation Pd:1.7W; Pulse Current Idm:8.7A; SMD Marking:ZXMHC6A07; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V; Voltage Vgs th N Channel 1 Min:1V; Voltage Vgs th P Channel Min:1V