供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-01
Lifecycle StatusProduction (Last Updated: 8 months ago)
描述
由其分销商提供的 Diodes Inc. ZXMC6A09DN8TA 的描述。
N & P Channel 60 V 5.1 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
Power Field-Effect Transistor, 3.9A I(D), 60V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
2.1W 20V 1V@ 250µA (Min) 24.2nC@ 10V 2N+2PChannel 60V 45mΩ@ 8.2A,10V 3.9A，3.7A 1.407nF@ 40V，1.58nF@ 40V SOIC-8 SMD mount 1.75mm(height)
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)3.9 A
Current Rating5.1 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vds)60 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.407 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Rds On Max45 mΩ
Resistance55 mΩ
Rise Time5.8 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time4.6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明