Diodes Inc. ZX5T849GTA

Name: Diodes Inc. ZX5T849GTA
Brand: Diodes Inc.
SKU: ZX5T849GTA

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

$ 0.5

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet		ZX5T849GTA	1,000	1K					0.439	0.378	3d
Verical		ZX5T849GTA	1,000	1K					0.448	0.448
TME	2	ZX5T849GTA	0	1		2.085*	1.201*	0.867*	0.610*	0.555*	1d
Newark		ZX5T849GTA	0	1	Cut Tape	2.090	1.250	1.050	0.695	0.695
Arrow Electronics		ZX5T849GTA	0	1K					0.481	0.392

数据表和文档

下载 Diodes Inc. ZX5T849GTA 的数据表和制造商文档。

IHS

Datasheet6 页22 年前

Newark

Future Electronics

DigiKey

库存历史记录

3 个月趋势:

+313%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZX5T849GTA 的描述。

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

Trans GP BJT NPN 30V 7A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 30V 7A SOT-223

Win Source

ZX5T849G Series NPN 7 A 30 V SMT Silicon Low Saturation Transistor - SOT-223

Future Electronics

TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:1.6W; DC Collector Current:7A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:7A; Collector Emitter Voltage Vces:35mV; Continuous Collector Current Ic Max:7A; Current Ic @ Vce Sat:6.5A; Current Ic Continuous a Max:7A; Current Ic hFE:7mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:140MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1.6W; Power Dissipation Ptot Max:3W; Pulsed Current Icm:20A; Resistance R1:28mohm; SMD Marking:X5T849; Termination Type:SMD; Voltage Vcbo:80V

element14 APAC