Diodes Inc. ZTX605

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
$ 0.438
Production

价格与库存

数据表和文档

下载 Diodes Inc. ZTX605 的数据表和制造商文档。

_legacy Avnet

Datasheet3 页19 年前

IHS

Newark

Diodes Inc SCT

Future Electronics

库存历史记录

3 个月趋势:
-30.25%

CAD 模型

从我们值得信赖的合作伙伴处下载 Diodes Inc. ZTX605 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1997-10-31
Lifecycle StatusProduction (Last Updated: 4 months ago)

相关零件

Diodes Inc.ZTX605STZ
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.ZTX453
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.ZTX453STZ
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
onsemiZTX614
Bulk Through Hole NPN 3 Bipolar (BJT) Transistor 10000 @ 500mA 5V 800mA 1W 100V
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiMPSA29
MPSAXX Series NPN 625 mW 100V 800 mA Through Hole Darlington Transistor TO-92-3

描述

由其分销商提供的 Diodes Inc. ZTX605 的描述。

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX605 Series 120V 1A NPN Silicon Planar Medium Power Darlington Transistor TO92
Trans Darlington NPN 120V 1A 1000mW 3-Pin E-Line
NPN Darlington Transistor ELIN
DiodesZetex , NPN, 1 A, E-Line, , , 3
TRANSISTORS, DARLINGTON, NPN DARLINGTON
DARLINGTON TRANSISTOR, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:5000; Transistor Case Style:E-Line; No. of Pins:3; Av Current Ic:1A; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:1A; Device Marking:ZTX605; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:2000; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:140V

制造商别名

Diodes Inc. 在全球拥有多个品牌,分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated