Diodes Inc. MMDT5451-7-F

Name: Diodes Inc. MMDT5451-7-F
Brand: Diodes Inc.
SKU: MMDT5451-7-F

Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW

$ 0.111

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		MMDT5451-7-F	3,454	5	Cut Tape		0.263	0.172	0.116	0.116
Arrow Electronics		MMDT5451-7-F	5,800	3831						0.030
DigiKey	3	MMDT5451-FDICT-ND	505	1	Cut Tape	0.430	0.265	0.167	0.111	0.111
TME	2	MMDT5451-7-F	1,954	1		0.304	0.220	0.124	0.070	0.052	22h
Avnet		MMDT5451-7-F	0	3K						0.051	1d

数据表和文档

下载 Diodes Inc. MMDT5451-7-F 的数据表和制造商文档。

Newark

Datasheet7 页7 年前

Datasheet5 页18 年前

Diodes Inc SCT

Future Electronics

DigiKey

iiiC

库存历史记录

3 个月趋势:

-65.34%

CAD 模型

从我们值得信赖的合作伙伴处下载 Diodes Inc. MMDT5451-7-F 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. MMDT5451-7-F 的描述。

Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW

Avnet Silica

MMDT5451 Series NPN/PNP 160 V 200 mW Small Signal Transistor SMT - SOT-363

Future Electronics

Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R / TRANS NPN/PNP 160V/150V SOT363

Win Source

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Semicontronic

General Purpose Transistors NPN,PNP Ic=200mA Vceo=160V,150V hfe=80~250/60~240 P=320mW SOT363

HQonline

GP BJT NPN/PNP 160/150V 0.2A 6P SOT363 | Diodes Inc MMDT5451-7-F

RS (Formerly Allied Electronics)

DiodesZetex NPN/PNP, SOT-363 (SC-88), , 200 mA, -160 V

UnikeyIC

TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Farnell

Transistor, Npn/Pnp, Sot363; Transistor, Polaridad:Npn, Pnp; Tensión Colector Emisor V(Br)Ceo:160V; Disipación De Potencia Pd:200Mw; Corriente De Colector Dc:200Ma; Ganancia De Corriente Dc Hfe:80; Núm. De Contactos:6 |Diodes Inc. MMDT5451-7-F

Newark