价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | DXT3906-13 | 80 | 80 | |||||||||
| Arrow Electronics | DXT3906-13 | 80 | 80 | |||||||||
| DigiKey | DXT3906-13DICT-ND | 6,861 | 1 | Cut Tape | ||||||||
| TME | DXT3906-13 | 0 | 1 | 12h | ||||||||
| Future Electronics | DXT3906-13 | 0 | 2500 | Tape & Reel |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.ZXTP25040DZTA
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Diodes Inc.2DB1132R-13
2DB1132X Series 1 W 32 V 1 A Surface Mount PNP Switching Transistor - SOT-89
ROHMDTA023YEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA043EEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA043ZEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
描述
由其分销商提供的 Diodes Inc. DXT3906-13 的描述。
DXT3906 Series 40 V 200 mA PNP Surface Mount Transistor - SOT-89
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 0.2A 1000mW 4-Pin(3+Tab) SOT-89 T/R
400mV@ 5mA,50mA PNP 1W 5V 50nA 40V 40V 200mA SOT-89-3 4.5mm*2.48mm*1.5mm
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
Transition Frequency250 MHz
TypeGeneral Purpose
Dimensions
Height1.5 mm
Length4.5 mm
Width2.48 mm