价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | DSS4240VDICT-ND | 215 | 1 | Cut Tape | ||||||||
| TME | DSS4240V-7 | 0 | 1 | 21h | ||||||||
| Future Electronics | DSS4240V-7 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | DSS4240V-7 | 0 | 3K | 2d | ||||||||
| Arrow Electronics | DSS4240V-7 | 0 | 3K |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
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300mV@ 250¦ÌA,5mA 2 NPN - Pre-Biased (Dual) 100mW 5V 100nA 50V 100mA SOT-563 1.6mm*1.2mm
描述
由其分销商提供的 Diodes Inc. DSS4240V-7 的描述。
DSS4240V Series 40 V 2 A 600 mW NPN Surface Mount Transistor -SOT-563
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
400mV@ 200mA,2A NPN 600mW 5V 100nA 40V 40V 2A SOT-563 1.6mm*1.2mm*600¦Ìm
TRANSISTOR, NPN, SOT563, 0.6W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:0.6W; DC Collector Current:0.1A; DC Current Gain hFE:300; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-563; SVHC:No SVHC (18-Jun-2010); Collector Emitter Voltage Vces:75mV; Max Current Ic Continuous a:0.1A; Min Hfe:300; Package / Case:SOT-563; Power Dissipation:0.6W; Termination Type:SMD; Transistor Type:Low Saturation
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-563
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight3.005049 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product150 MHz
hFE Min75
Max Breakdown Voltage40 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation600 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation600 mW
TerminationSMD/SMT
Transition Frequency150 MHz
Dimensions
Height600 µm
Length1.6 mm
Width1.2 mm