价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN6040SVT-7 | 320 | 5 | Cut Tape | ||||||||
| Verical | DMN6040SVT-7 | 6,000 | 3K | |||||||||
| Arrow Electronics | DMN6040SVT-7 | 67 | 67 | |||||||||
| Future Electronics | DMN6040SVT-7 | 6,000 | 3K | Tape & Reel | ||||||||
| DigiKey | DMN6040SVT-7DICT-ND | 2,995 | 1 | Cut Tape |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMN4060SVT-7
Mosfet, N-Ch, 45V, 4.8A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN4060SVT-7
Diodes Inc.DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm
描述
由其分销商提供的 Diodes Inc. DMN6040SVT-7 的描述。
N-Channel 60 V 44 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
Mosfet, N-Ch, 60V, 5A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN6040SVT-7
Trans MOSFET N-CH 60V 5A Automotive 6-Pin TSOT-26 T/R
Small Signal Field-Effect Transistor, 4.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.2W(Ta) 20V 3V@ 250¦ÌA 22.4nC@ 10 V 1N 60V 44m¦¸@ 4.3A,10V 5A 1.287nF@25V TSOT-26 2.9mm*1.6mm*1mm
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
60V 5A 44mΩ@10V,4.3A 1.2W N Channel SOT-26 MOSFETs ROHS
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTSOT
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.287 nF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.8 W
Rds On Max44 mΩ
Rise Time8.1 ns
Schedule B8541290080
Turn-Off Delay Time20.1 ns
Turn-On Delay Time6.6 ns
Dimensions
Height900 µm
Length2.9 mm
Width1.6 mm