价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | DMN601DMKDICT-ND | 259 | 1 | Cut Tape | ||||||||
| TME | DMN601DMK-7 | 0 | 1 | 4h | ||||||||
| Newark | DMN601DMK-7 | 0 | 5 | Cut Tape | ||||||||
| Future Electronics | DMN601DMK-7 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | DMN601DMK-7 | 0 | 3K | 2d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-26
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMN5L06DMK-7
Dual N channel 50 V 2.5 O 400 mW Surface Mount MosFet Surface Mount - SOT-26
Diodes Inc.DMN3051LDM-7
Mosfet, N-Ch, 30V, 4A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMN3051LDM-7
描述
由其分销商提供的 Diodes Inc. DMN601DMK-7 的描述。
DMN601 Series 60 V 2.4 Ohm Dual N-Channel Enhancement Mode Mosfet - SOT-23-6
Transistor MOSFET Array Dual N-CH 60V 580mA 6-Pin SOT-26 T/R
Mosfet, Dual, N-Ch, 60V, 0.51A Rohs Compliant: Yes |Diodes Inc. DMN601DMK-7
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
Dual N-Channel Enhancement MOSFET SOT-26
Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, N-CH, 60V, 0.51A;
场效应管, MOSFET, 双路, N沟道, 60V, 0.51A;
DiodesZetex NMOS, Vds=60 V, 580 mA, SOT-26, , 6
MOSFETs - Low Threshold Voltage Dual N-Channel
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-26
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)305 mA
Current Rating305 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time9.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation980 mW
Rds On Max2.4 Ω
Rise Time3.4 ns
Schedule B8541210080
Turn-Off Delay Time15.7 ns
Turn-On Delay Time3.9 ns
Voltage Rating (DC)60 V
Dimensions
Height1.1 mm
Length3 mm
Width1.6 mm