价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN3018SSD-13 | 671 | 1 | Cut Tape | ||||||||
| TME | DMN3018SSD-13 | 49 | 1 | 22h | ||||||||
| RS (Formerly Allied Electronics) | DMN3018SSD-13 | 0 | 25 | Bulk | 13h | |||||||
| Future Electronics | DMN3018SSD-13 | 0 | 2500 | Tape & Reel | ||||||||
| Avnet | DMN3018SSD-13 | 0 | 2500 | 1d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-20
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
Diodes Inc.DMC3021LSDQ-13
Dual N/P-Channel 30 V 32 /53 mOhm 7.8/10.1 nC 2.5 W Silicon Mosfet - SOIC-8
onsemiNTMS4800NR2G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 4.9A Ta 6.4A 2W 6.5ns
描述
由其分销商提供的 Diodes Inc. DMN3018SSD-13 的描述。
Dual N-Channel 30 V 30 mOhm 6 nC 1.5 W Silicon Surface Mount Mosfet - SOIC-8
Mosfet, Dual, N-Ch, 30V, 8.7A Rohs Compliant: Yes |Diodes Inc. DMN3018SSD-13
Trans MOSFET N-CH 30V 6.7A 8-Pin SO T/R / MOSFET 2N-CH 30V 6.7A 8SO
Dual MOSFET, N Channel, 30 V, 30 V, 6.7 A, 6.7 A, 0.016 ohm
MOSFETs VDS=30V ID=6.7A PD=1.5W 2 N-Channel SOIC8_150MIL
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=30 V, 8.7 A, SOIC, , 8
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, 双路, N沟道, 30V, 8.7A;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance697 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max22 mΩ
Rise Time4.4 ns
Schedule B8541290080
Turn-Off Delay Time20.1 ns
Turn-On Delay Time4.3 ns
Dimensions
Height1.5 mm
Length4.95 mm
Width3.95 mm