描述
由其分销商提供的 Diodes Inc. DMN2016LHAB-7 的描述。
Small Signal Field-Effect Transistor, 7.5A I(D), N-Channel, Metal-oxide Semiconductor FET
Transistor MOSFET Array Dual N-CH 20V 7.7A 8-Pin uDFN2030 T/R
Trans MOSFET N-CH 20V 7.5A 6-Pin UDFN EP T/R / MOSFET 2N-CH 20V 7.5A 6UDFN
1.65W 12V 1.1V@ 250µA 16nC@ 4.5V 2individualNChannel 20V 15.5mΩ@ 4A,4.5V 7.5A 1.55nF@10V UDFN-20306 SMD mount 2mm*3mm*600μm
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.55 nF
Max Operating Temperature150 °C
Max Power Dissipation1.65 W
Min Operating Temperature-55 °C
Number of Channels2
Rds On Max15.5 mΩ
Rise Time15.5 ns
Turn-Off Delay Time40.9 ns
Turn-On Delay Time6.9 ns
Dimensions
Height600 µm
Length2.05 mm
Width3.05 mm