相关零件
VishaySI1070X-T1-GE3
MOSFET, N-CH, 30V, 1.2A, SC-89; Available until stocks are exhausted Alternative available
描述
由其分销商提供的 Diodes Inc. DMG3401LSN-7 的描述。
Single P-Channel 30 V 85 mOhm 11.6 nC 1.2 W Silicon SMT Mosfet - SOT-23
Mosfet Bvdss: 25V~30V Sc59 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG3401LSN-7
Power MOSFET, P Channel, 30 V, 3 A, 0.041 ohm, SC-59, Surface Mount
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.326 nF
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.2 W
Rds On Max50 mΩ
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time71 ns
Turn-On Delay Time8 ns