供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-07-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-03-15
LTD Date2021-03-15
相关零件
Diodes Inc.DCP56-16-13
TRANS NPN 80V 1A SOT-223 / Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
描述
由其分销商提供的 Diodes Inc. DCP56-13 的描述。
DCP56 Series NPN 1 W 80 V 1 A Surface Mount Epitaxial Transistor - SOT-223
Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1 W
Transition Frequency200 MHz
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm