供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Diodes Inc. BCP5610TA 的描述。
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 TR 1K
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
500mV@ 50mA,500mA NPN 2W 5V 100nA 100V 80V 1A SOT-223-3 1.65mm
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product125 MHz
hFE Min63
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Height1.65 mm
Length6.55 mm
Width3.55 mm