供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-07
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
Diodes Inc.BC847B-7-F
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.BC847C-7-F
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 310 mW, SOT-23, Surface Mount
Diodes Inc.BC847C-13-F
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
描述
由其分销商提供的 Diodes Inc. BC847A-7-F 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847A Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount - SOT-23-3
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin SOT-23 T/R
Bipolar Transistors - BJT NPN BIPOLAR
TRANSISTOR, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:220; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:600mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:110; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min110
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency300 MHz
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm