价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | BC846BLP4-7B | 0 | 1 | 1d | ||||||||
| Newark | BC846BLP4-7B | 0 | 5 | Cut Tape | ||||||||
| Future Electronics | BC846BLP4-7B | 0 | 10K | Tape & Reel | ||||||||
| Avnet | BC846BLP4-7B | 0 | 10K | 2d | ||||||||
| RS (Formerly Allied Electronics) | BC846BLP4-7B | 0 | 100 | Bulk | 20h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Diodes Inc. BC846BLP4-7B 的描述。
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 460 mW, X2-DFN1006, Surface Mount
BC846BLP4 Series 65 V 100 mA NPN Small Signal SMT Transistor - X2-DFN1006-3
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT 65V NPN Small Sig 80V 65V 100mA
Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:1W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz; Dc Current Gain Hfe Min:200Hfe Rohs Compliant: No |Diodes Inc. BC846BLP4-7B.
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
Contact PlatingGold
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Continuous Collector Current200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min200
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1 W
Transition Frequency300 MHz
Dimensions
Height350 µm
Length1.05 mm
Width650 µm