价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | 2DD2661-13 | 0 | 5 | Cut Tape | 11h | |||||||
| Win Source | WS-2DD2661-13 | 11,689 | 335 | 12h | ||||||||
| Aztech | 2DD2661-13 | 13,691 | 8h | |||||||||
| Anlinkda | 2DD2661-13 | 30,979 | 19h | |||||||||
| RC Electronics | 2DD2661-13 | 27,826 | 1 | >1wk |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-03-15
LTD Date2021-03-15
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Diodes Inc.2DD2678-13
DIODES INC. 2DD2678-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270 hFE
描述
由其分销商提供的 Diodes Inc. 2DD2661-13 的描述。
DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 2A 2000mW 4-Pin(3+Tab) SOT-89 T/R
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 170MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1A; DC Current Gain hFE: 270hFE; Transistor C
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. 2DD2661-13
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)15 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage180 mV
Collector Emitter Voltage (VCEO)12 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency170 MHz
Gain Bandwidth Product170 MHz
hFE Min270
Max Breakdown Voltage12 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Manufacturer Package Identifier2DD2661-13
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Transition Frequency170 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm