TRANSISTOR; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Current Ic Continuous a Max:30mA; Voltage, Vce Sat Max:0.06V; Power Dissipation:350mW; Min Hfe:200; ft, Typ:300MHz; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-40°C to +85°C