由其分销商提供的 Ampleon BLF578,112 的描述。
RF Power Transistor, 0.01 to 0.5 GHz, 1200 W, 26 dB, 50 V, LDMOS, SOT-539A
Trans MOSFET N-CH 110V 88A 5-Pin LDMOST Blister
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF FET LDMOS 110V 24DB SOT539A