VBsemi

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P—channelchannel, -30V, -5.6A, Rds(on), 47MΩ@10V, 56MΩ@4.5V, 20VGS(±V)；-1VTH(V) ENCAPSULATION：SOT23-3

Power Field-Effect Transistor, 2.3A I(D), 60V, 0.118ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 6.4A I(D), 150V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P—channelchannel, -60V, -6.5A, Rds(on), 58MΩ@10V, 70MΩ@4.5V, 20VGS(±V)；-1~-3VTH(V) ENCAPSULATION：SOT223-3

N—channelchannel, 100V, 5A, Rds(on), 100MΩ@10V, 120MΩ@4.5V, 20VGS(±V)；2~4VTH(V) ENCAPSULATION：SOT223-3

P—channelchannel, -30V, -6A, Rds(on), 40MΩ@10V, 54MΩ@4.5V, 20VGS(±V)；-1.5VTH(V) ENCAPSULATION：SOP8

N—channelchannel, 60V, 110A, Rds(on), 4.5MΩ@10V, 15MΩ@4.5V, 20VGS(±V)；2.8VTH(V) ENCAPSULATION：TO252