Easev 内存

2GB 1GX16 1.14V 312MA 1.26V 2.666GHZ 16 Bit FBGA-96 13.5MM*7.5MM*1.1MM

Active Volatile ROHS3Compliant DRAM ic memory -40C~105C TA 1.1V 16Gb 512M x 32 2133MHz

Active BALL BOTTOM Volatile ic memory -40C~105C TA 1.1V 34359738368bit 1866MHz

Active Volatile ROHS3Compliant Automotive AEC-Q100 ic memory -40C~95C TC 0.6V 1.1V 24Gb 768M x 32 1.866GHz

Ddr Dram, 64MX16, 0.4NS, Cmos, PBGA84, 8 X 12.50 Mm, Rohs Compliant, FBGA-84

Ddr Dram, 128MX16, 0.4NS, Cmos, PBGA84, 9 X 12.5 M, Rohs Compliant, FBGA-84

Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~125C TC 1.14V 8589934592bit 7.5mm

Active Volatile ROHS3Compliant Parallel ic memory 0C~95C TC 1.14V~1.26V 4Gb 512M x 8 13.75ns

DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, VFBGA, 200 Pins

Dram Chip LPDDR5 Sdram 64GBIT 1G X 64 Fbga