STMicroelectronics USB6B1RL
Production
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Breakdown Voltage6 V
Capacitance25 pF
Clamping Voltage-1 V
DirectionBidirectional
Element ConfigurationDual
ESD ProtectionYes
Leakage Current10 µA
Max Breakdown Voltage6 V
Max Operating Temperature85 °C
Max Power Dissipation500 W
Max Reverse Leakage Current10 µA
Min Breakdown Voltage6 V
Min Operating Temperature-40 °C
Number of Bidirectional Channels2
Number of Channels4
Number of Elements1
Operating Supply Voltage5.25 V
PackagingCut Tape
Peak Pulse Current40 A
Peak Pulse Power 500 W
PolarityBidirectional, Unidirectional
Power Line ProtectionYes
Power Rating500 W
Reverse Breakdown Voltage6 V
Reverse Standoff Voltage5.25 V
Schedule B8536300000
TerminationSMD/SMT
Test Current1 mA
Voltage Rating (DC)6 V
Working Voltage5.25 V
Dimensions
Depth4 mm
Height1.25 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: +193%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics USB6B1RL.
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Descriptions
Descriptions of STMicroelectronics USB6B1RL provided by its distributors.
ESD Suppressor Diode Diode Array Uni-Dir 5.25V 8-Pin SO N T/R / TVS DIODE 5.25VWM 8SOIC
USB6B1 Series 6V 25 pF SMT Bi-Directional Data Line Protection - SOIC-8
ESD PROTECTION ARRAY, SOIC-8; Clamping Voltage Vc Max: -; Diode Case Style: SOIC; No. of Pins: 8Pins; Operating Voltage: 5.25V; Power Dissipation Pd: 500W; Product Range: USB6B Series; Automotive Qualification Standard: -; SVHC: No SVHC (17-Dec-2015); Diode Type: ESD Protection
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +193%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Breakdown Voltage6 V
Capacitance25 pF
Clamping Voltage-1 V
DirectionBidirectional
Element ConfigurationDual
ESD ProtectionYes
Leakage Current10 µA
Max Breakdown Voltage6 V
Max Operating Temperature85 °C
Max Power Dissipation500 W
Max Reverse Leakage Current10 µA
Min Breakdown Voltage6 V
Min Operating Temperature-40 °C
Number of Bidirectional Channels2
Number of Channels4
Number of Elements1
Operating Supply Voltage5.25 V
PackagingCut Tape
Peak Pulse Current40 A
Peak Pulse Power 500 W
PolarityBidirectional, Unidirectional
Power Line ProtectionYes
Power Rating500 W
Reverse Breakdown Voltage6 V
Reverse Standoff Voltage5.25 V
Schedule B8536300000
TerminationSMD/SMT
Test Current1 mA
Voltage Rating (DC)6 V
Working Voltage5.25 V
Dimensions
Depth4 mm
Height1.25 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant