STMicroelectronics ULN2804A
Production
Technical Specifications
Physical
Case/PackagePDIP
MountThrough Hole
Number of Pins18
Weight1.270087 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage1.1 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current500 mA
Current Rating500 mA
Emitter Base Voltage (VEBO)50 V
Max Collector Current500 mA
Max Input Voltage30 V
Max Operating Temperature85 °C
Max Output Voltage50 V
Max Power Dissipation2.25 W
Min Operating Temperature-20 °C
Number of Channels8
Number of Elements8
Output Current500 mA
Output Voltage50 V
PolarityNPN
Schedule B8541290080
Voltage Rating (DC)50 V
Dimensions
Height3.68 mm
Length23.24 mm
Width7.1 mm
Inventory History
3 month trend: -22.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.184
$ 1.329
Stock
551,262
347,013
Authorized Distributors
11
11
Mount
Through Hole
Through Hole
Case/Package
PDIP
PDIP
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
500 mA
500 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
1.1 V
1.1 V
hFE Min
-
-
Power Dissipation
-
-
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics ULN2804A.
Related Parts
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MC Series 500 mA 50 V NPN High Current Darlington Transistor Array - PDIP-16
Descriptions
Descriptions of STMicroelectronics ULN2804A provided by its distributors.
Transistor Darlington NPN 50V 0.5A 18-Pin PDIP Tube
DARLINGTON ARRAY; DIP; EIGHT DARLINGTONTRANSISTORS; 50V; 30V; 500MA COLLECTOR
ULN Series 50 V 500 mA Through Hole Eight Darlington Array - DIP-18
EIGHT DARLINGTON ARRAY Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon
0.5 A 50 V 8 CHANNEL NPN Si POWER TRANSISTOR MS-001AC
DARLINGTON ARRAY, 8CH, NPN, 50V, 0.5A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 2.25W; DC Collector Current: 500mA; DC Current Gain hFE: 1000hFE; Transistor Case Style: DIP; No.
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -22.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackagePDIP
MountThrough Hole
Number of Pins18
Weight1.270087 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage1.1 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current500 mA
Current Rating500 mA
Emitter Base Voltage (VEBO)50 V
Max Collector Current500 mA
Max Input Voltage30 V
Max Operating Temperature85 °C
Max Output Voltage50 V
Max Power Dissipation2.25 W
Min Operating Temperature-20 °C
Number of Channels8
Number of Elements8
Output Current500 mA
Output Voltage50 V
PolarityNPN
Schedule B8541290080
Voltage Rating (DC)50 V
Dimensions
Height3.68 mm
Length23.24 mm
Width7.1 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant