Toshiba TK10A80E,S4X

Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
See all price breaks
DistributorSKUMOQPkg
DigiKey
TK10A80ES4X-ND1001Tube
2.320
2.320
1.536
1.103
0.975
1d
Mouser
757-TK10A80ES4X1481Tube
2.320
1.870
1.530
1.040
1.000
1d
Avnet
TK10A80E,S4X050
1.365
1.131
1.131
2d
Microchip USA
TK10A80E,S4X216100Tube
15.633
15.585
15.536
1d
Win Source
796822-TK10A80E,S4X7,00030
1.225
1.225
1.225
3d

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Weight6.000006 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation50 W
Rds On Max1 Ω
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time140 ns
Turn-On Delay Time80 ns
Dimensions
Height18.1 mm
Inventory History
3 month trend: -7.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available

Documents

Download datasheets and manufacturer documentation for Toshiba TK10A80E,S4X.

Upverter
Datasheet9 pages10 years ago

Inventory History

3 month trend:
-7.81%
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Engineering Resources

View Evaluation kits and Reference designs for Toshiba TK10A80E,S4X.

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Descriptions

Descriptions of Toshiba TK10A80E,S4X provided by its distributors.

Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
FETs - Single TO-220SIS Through Hole

Manufacturer Aliases

Toshiba has several brands around the world that distributors may use as alternate names. Toshiba may also be known as the following names:

  • TOSH
  • TOS
  • Toshiba Semiconductor and Storage
  • TOSHIB
  • SMK
  • TOSHIBA CORP
  • TOSHI
  • TSENG
  • TOSHIBA CORPORATION
  • TSH
  • Toshiba America Electronic Components
  • MARKTECH OPTOELECTRONICS
  • Toshiba Memory America Inc
  • TOSHIBA ELECTRONICS
  • Toshiba Electronic Devices and Storage Corporation
  • Toshiba America
  • TOSHIBA ELECTRONIC COMPONENTS
  • Toshiba America Electronic Components Inc
  • TOSHIBA-PB FREE
  • TOSHIBA SEMI
  • TOSHIBAPb
  • Toshiba Semiconductor
  • TOBHIBA
  • TOSHIAB
  • Toshiba Memory
Inventory History
3 month trend: -7.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Weight6.000006 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation50 W
Rds On Max1 Ω
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time140 ns
Turn-On Delay Time80 ns
Dimensions
Height18.1 mm

Documents

Download datasheets and manufacturer documentation for Toshiba TK10A80E,S4X.

Upverter
Datasheet9 pages10 years ago

Compliance

Environmental Classification
RoHSCompliant