onsemi TIP31C

Transistor TIP31C General Purpose BJT NPN 100 Volt 3 Amp TO-220

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.214 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation40 W
Transition Frequency3 MHz
Voltage Rating (DC)100 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm

Documents

Download datasheets and manufacturer documentation for onsemi TIP31C.

Upverter
Datasheet7 pages12 years ago
Datasheet6 pages15 years ago
Jameco
Datasheet5 pages19 years ago
Datasheet5 pages16 years ago
Datasheet5 pages23 years ago
DigiKey
Datasheet4 pages23 years ago
Datasheet6 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page10 years ago
Technical Drawing1 page16 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-9.08%

Alternate Parts

Price @ 1000
$ 0.32
$ 0.211
$ 0.211
Stock
384,512
684,195
684,195
Authorized Distributors
2
9
9
Mount
Through Hole
-
-
Case/Package
TO-220
TO-220-3
TO-220-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
3 A
3 A
3 A
Transition Frequency
3 MHz
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
1.2 V
1.2 V
hFE Min
10
25
25
Power Dissipation
40 W
2 W
2 W

Engineering Resources

View Evaluation kits and Reference designs for onsemi TIP31C.

Related Parts

Descriptions

Descriptions of onsemi TIP31C provided by its distributors.

Transistor TIP31C General Purpose BJT NPN 100 Volt 3 Amp TO-220
TRANS NPN 100V 3A TO220AB / Trans GP BJT NPN 100V 3A 2000mW 3-Pin(3+Tab) TO-220 Bag
TIP Series NPN 100 V 3 A Epitaxial Silicon Transistor - TO-220-3
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3
Darlington Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:40W; DC Current Gain Min (hfe):10; Package/Case:TO-220; C-E Breakdown Voltage:100V; DC Collector Current:3A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • TIP 31 C
  • TIP 31C
  • TIP-31-C
  • TIP-31C
  • TIP31 C
  • TIP31C.

Technical Specifications

Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.214 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation40 W
Transition Frequency3 MHz
Voltage Rating (DC)100 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm

Documents

Download datasheets and manufacturer documentation for onsemi TIP31C.

Upverter
Datasheet7 pages12 years ago
Datasheet6 pages15 years ago
Jameco
Datasheet5 pages19 years ago
Datasheet5 pages16 years ago
Datasheet5 pages23 years ago
DigiKey
Datasheet4 pages23 years ago
Datasheet6 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page10 years ago
Technical Drawing1 page16 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Materials Sheet3 pages9 years ago
Reach Statement3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago