Vishay TEMT1000

Phototransistor IR Chip Silicon NPN Transistor 950nm 2-Pin SMD T/R

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser		782-TEMT1000	3,244	1	Tape & Reel	0.850	0.557	0.367	0.279	0.276	3h
Arrow Electronics	2	TEMT1000	1,000	1	Cut Tape	0.738	0.512	0.345	0.248	0.248	3h
Verical	2	TEMT1000	2,000	1K					0.249	0.214	3h
DigiKey	3	751-1052-1-ND	9,868	1	Cut Tape	0.870	0.565	0.370	0.370	0.370	3h
TME		TEMT1000	884	1		0.795*	0.317*	0.227*	0.215*	0.215*	3d

Technical Specifications

Physical

Case/PackageSMD/SMT

Contact PlatingTin

MountSurface Mount

Number of Pins2

Technical

Ambient Temperature Range High85 °C

Collector Emitter Breakdown Voltage70 V

Collector Emitter Saturation Voltage300 mV

Collector Emitter Voltage (VCEO)70 V

Dark Current1 nA

Fall Time2.3 µs

Lens StyleDomed

Max Breakdown Voltage70 V

Max Collector Current50 mA

Max Junction Temperature (Tj)100 °C

Max Operating Temperature85 °C

Max Power Dissipation100 mW

Min Operating Temperature-40 °C

Number of Channels1

Number of Elements1

OrientationTop View

PackagingTape & Reel

PolarityNPN

Power Consumption100 mW

Power Dissipation100 mW

Rise Time2 µs

Schedule B8541407080

Viewing Angle15 °

Wavelength880 nm

Dimensions

Height1.5 mm

Length2.5 mm

Width2 mm

Inventory History

3 month trend: -51.60%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Documents

Download datasheets and manufacturer documentation for Vishay TEMT1000.

element14 APAC

Datasheet9 pages11 years ago

Datasheet9 pages12 years ago

Datasheet9 pages13 years ago

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Datasheet10 pages15 years ago

Datasheet10 pages19 years ago

Newark

Datasheet9 pages8 years ago

Datasheet9 pages10 years ago

Upverter

Datasheet9 pages5 years ago

TME

Datasheet9 pages9 years ago

element14

Datasheet9 pages14 years ago

Inventory History

3 month trend:

-51.60%

Engineering Resources

View Evaluation kits and Reference designs for Vishay TEMT1000.

Related Parts

Descriptions

Descriptions of Vishay TEMT1000 provided by its distributors.

Phototransistor IR Chip Silicon NPN Transistor 950nm 2-Pin SMD T/R

Verical

PHOTO TRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:15°; No. of Pins:2; MSL:MSL 2 - 1 year; Current Ic Typ:50mA; Half Angle:15°; Operating Temperature Range:-40°C to +85°C; Peak Spectral Response Wavelength:880nm; Rise Time:2µs; Transistor Type:Photo

element14 APAC

Photo Transistor; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:15°; No. of Pins:2; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No ;RoHS Compliant: Yes

Newark