Vishay SUD90330E-GE3

Transistor MOSFET N-CH 200V 35.8A 3-Pin TO-252
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Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)35.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance31.2 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation125 W
Turn-Off Delay Time30 ns
Turn-On Delay Time12 ns
Dimensions
Height2.507 mm

Documents

Download datasheets and manufacturer documentation for Vishay SUD90330E-GE3.

element14 APAC
Datasheet7 pages6 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing2 pages4 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SUD90330E-GE3.

Descriptions

Descriptions of Vishay SUD90330E-GE3 provided by its distributors.

Transistor MOSFET N-CH 200V 35.8A 3-Pin TO-252
Avnet Japan
N-CHANNEL 200-V (D-S) 175C MOSFET
MOSFET N-CH 200V 35.8A TO252AA
MOSFET, N-CH, 200V, 35.8A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 35.8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0312ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)35.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance31.2 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation125 W
Turn-Off Delay Time30 ns
Turn-On Delay Time12 ns
Dimensions
Height2.507 mm

Documents

Download datasheets and manufacturer documentation for Vishay SUD90330E-GE3.

element14 APAC
Datasheet7 pages6 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing2 pages4 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago