Vishay SUD80460E-GE3

N-Channel 150 V 44.7 mOhm 65.2 W SMT ThunderFET Power Mosfet - TO-252
Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance37.2 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation65.2 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time8 ns
Dimensions
Height2.507 mm

Documents

Download datasheets and manufacturer documentation for Vishay SUD80460E-GE3.

Newark
Datasheet7 pages7 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing2 pages4 years ago
Future Electronics
Datasheet7 pages6 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SUD80460E-GE3.

Descriptions

Descriptions of Vishay SUD80460E-GE3 provided by its distributors.

N-Channel 150 V 44.7 mOhm 65.2 W SMT ThunderFET Power Mosfet - TO-252
Mosfet, N-Ch, 150V, 42A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0372Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SUD80460E-GE3
Power Field-Effect Transistor, 18.1A I(D), 150V, 0.0447ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance37.2 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation65.2 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time8 ns
Dimensions
Height2.507 mm

Documents

Download datasheets and manufacturer documentation for Vishay SUD80460E-GE3.

Newark
Datasheet7 pages7 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing2 pages4 years ago
Future Electronics
Datasheet7 pages6 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago