STMicroelectronics STY139N65M5
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 511-STY139N65M5 | 279 | 1 | Tube | 1d | ||||||||
| STY139N65M5 | 1,321 | 1 | 1d | |||||||||
| STY139N65M5 | 1,321 | 1 | 1d | |||||||||
| 45AC7799 | 1,978 | 1 | 1d | |||||||||
| STY139N65M5 | 0 | 1 | 3d |
Technical Specifications
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins247
Technical
Continuous Drain Current (ID)130 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance15.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation625 mW
Rds On Max17 mΩ
Resistance17 mΩ
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time295 ns
Turn-On Delay Time295 ns
Dimensions
Height20.3 mm
Length15.9 mm
Width5.3 mm
Inventory History
3 month trend: +151%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STY139N65M5.
Related Parts
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N-channel 650 V, 0.012 Ohm typ., 138 A MDmesh M5 Power MOSFET in a Max247 package
STMicroelectronics STY112N65M5
N-channel 650 V, 0.019 Ohm typ., 96 A MDmesh M5 Power MOSFET in a Max247 package
STMicroelectronics STY105NM50N
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh(TM) II Power MOSFET in Max247 package
Descriptions
Descriptions of STMicroelectronics STY139N65M5 provided by its distributors.
N-channel 650 V, 0.014 Ohm typ., 130 A MDmesh M5 Power MOSFET in Max247 package
Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube
N-Channel 650 V 130 A 17 mOhm Through Hole MDmesh V Power Mosfet - Max247
MOSFET N-Channel 650V 130A Max247
Power Field-Effect Transistor, 130A I(D), 650V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STY139N65M5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +151%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins247
Technical
Continuous Drain Current (ID)130 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance15.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation625 mW
Rds On Max17 mΩ
Resistance17 mΩ
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time295 ns
Turn-On Delay Time295 ns
Dimensions
Height20.3 mm
Length15.9 mm
Width5.3 mm